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| NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor D P2503BDG TO-252 Lead-Free PRODUCT SUMMARY V(BR)DSS 30 RDS(ON) 25m ID 12A G S 1.GATE 2.DRAIN 3.SOURCE ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction & Storage Temperature Range 1 SYMBOL VDS VGS LIMITS 30 20 12 10 30 32 22 -55 to 150 UNITS V V TC = 25 C TC = 70 C ID IDM A TC = 25 C TC = 70 C PD Tj, Tstg W C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient 1 2 SYMBOL RJc RJA TYPICAL MAXIMUM 3 75 UNITS C / W C / W Pulse width limited by maximum junction temperature. Duty cycle 1% ELECTRICAL CHARACTERISTICS (TC = 25 C, Unless Otherwise Noted) LIMITS PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = 20V VDS = 24V, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0V, TJ = 55 C 30 1 1.5 2.5 250 1 10 A V nA MIN TYP MAX UNIT 1 SEP-30-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2503BDG TO-252 Lead-Free 30 25 18 19 37 25 m S A On-State Drain Current1 Drain-Source On-State Resistance1 Forward Transconductance1 ID(ON) RDS(ON) gfs VDS = 5V, VGS = 10V VGS = 4.5V, ID = 6A VGS = 10V, ID = 12A VDS = 5V, ID = 12A DYNAMIC Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 C) VDD = 10V ID 1A, VGS = 10V, RGEN = 6 VDS = 0.5V(BR)DSS, VGS = 10V, ID = 12A VGS = 0V, VDS = 10V, f = 1MHz 790 175 65 16 2.5 2.1 2.2 7.5 11.8 3.7 4.4 15 21.3 7.4 nS nC pF Gate-Source Charge2 Gate-Drain Charge 2 2 Turn-On Delay Time2 Rise Time 2 Turn-Off Delay Time2 Fall Time Continuous Current Pulsed Current3 Forward Voltage1 1 2 IS ISM VSD IF = 1A, VGS = 0V 1.3 2.6 1 A V Pulse test : Pulse Width 300 sec, Duty Cycle 2%. Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. REMARK: THE PRODUCT MARKED WITH "P2503BDG", DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2 SEP-30-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2503BDG TO-252 Lead-Free TYPICAL PERFORMANCE CHARACTERISTICS Body Diode Forward Voltage Variation with Source Current and Temperature 100 V GS = 0V 10 Is - Reverse Drain Current(A) T A = 125 C 1 25 C 0.1 -55 C 0.01 0.001 0 0.4 0.2 0.6 0.8 1.0 VSD - Body Diode Forward Voltage(V) 1.2 1.4 3 SEP-30-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2503BDG TO-252 Lead-Free 4 SEP-30-2004 NIKO-SEM N-Channel Logic Level Enhancement Mode Field Effect Transistor P2503BDG TO-252 Lead-Free TO-252 (DPAK) MECHANICAL DATA mm Dimension Min. A B C D E F G 9.35 2.2 0.45 0.89 0.45 0.03 5.2 Typ. Max. 10.4 2.4 0.6 1.5 0.69 0.23 6.2 H I J K L M N Dimension Min. 0.89 6.35 5.2 0.6 0.5 3.96 4.57 Typ. Max. 2.03 6.80 5.5 1 0.9 5.18 mm A B F C H G L 3 1 K M 2 J I D E 5 SEP-30-2004 |
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